HM250N03A - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The HM250N03A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS =30V ,ID =250A RDS(ON) = 0.9mΩ (Typ) @ VGS=10V RDS(ON) = 1.8mΩ (Typ) @ VGS=4.5V.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability.

H&M Semiconductor

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Datasheet Details

Part number	HM250N03A
Manufacturer	H&M Semiconductor
File Size	1.12 MB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM250N03A Datasheet
Additional preview pages of the HM250N03A datasheet.

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HM250N03A N-Channel Enhancement Mode Power MOSFET Description The HM250N03A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V ,ID =250A RDS(ON) = 0.9mΩ (Typ) @ VGS=10V RDS(ON) = 1.8mΩ (Typ) @ VGS=4.

Published: Jun 22, 2025 |