HM25N06D - MOSFET

Datasheet Summary

Description

The HM25N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

can be used in a wide variety of applications.

Features

VDS >60V,ID =25A RDS(ON) < 17mΩ @ VGS=10V （Typ:12.6mΩ）.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Low gate to drain charge to reduce switching losses.

H&M Semiconductor

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Datasheet Details

Part number	HM25N06D
Manufacturer	H&M Semiconductor
File Size	447.87 KB
Description	MOSFET
Datasheet	HM25N06D Datasheet
Additional preview pages of the HM25N06D datasheet.

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Description The HM25N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS >60V,ID =25A RDS(ON) < 17mΩ @ VGS=10V （Typ:12.

Published: Jun 22, 2025 |