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HM25P15 - P-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The HM25P15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =-150V,ID =-25A RDS(ON).

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Datasheet Details

Part number HM25P15
Manufacturer H&M Semiconductor
File Size 434.22 KB
Description P-Channel Enhancement Mode Power MOSFET
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HM25P15 P-Channel Enhancement Mode Power MOSFET Description The HM25P15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-150V,ID =-25A RDS(ON) <135mΩ @ VGS=-10V (Typ.=120mR) RDS(ON) <160mΩ @ VGS=-10V (Typ.
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