HM25P03Q - P-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The H034 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

Features

V S = -30V,I = -25A D D RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 20mΩ @ VGS=-10V.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

H&M Semiconductor

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Datasheet Details

Part number	HM25P03Q
Manufacturer	H&M Semiconductor
File Size	517.40 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	HM25P03Q Datasheet
Additional preview pages of the HM25P03Q datasheet.

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+034 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The H034 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. GENERAL FEATURES ● V S = -30V,I = -25A D D RDS(ON) < 35mΩ @ VGS=-4.

Published: Jun 30, 2025 |