HM25P06 - P-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The HM3 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.

Features

VDS =-60V,ID =-25A RDS(ON).

H&M Semiconductor

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Datasheet Details

Part number	HM25P06
Manufacturer	H&M Semiconductor
File Size	434.25 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	HM25P06 Datasheet
Additional preview pages of the HM25P06 datasheet.

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Full PDF Text Transcription

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P-Channel Enhancement Mode Power MOSFET Description The HM3 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.

Published: Jun 30, 2025 |