HM20N60A
Description
：
VDSS
HM20N60A, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
PD(TC=25℃)
RDS(ON)Typ
0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is
TO-3P(N), which accords with the Ro HS standard..
Features
： l Fast Switching l Low ON Resistance(Rdson≤0.45Ω) l Low Gate Charge (Typical Data:61n C) l Low Reverse transfer capacitances(Typical: 20p F) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
VDSS
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche...
