High breakdown voltage High input impedance Low gate threshold voltage Low drain-source ON resistance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown Specially suited for telephone subsets
max. ∅ .022 (0.55) .098 (2.5) D G S.
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BS108. For precise diagrams, and layout, please refer to the original PDF.
BS108 DMOS Transistors (N-Channel) TO-92 .181 (4.6) min. .492 (12.5) .181 (4.6) .142 (3.6) FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ High breakdown voltage High input impedance Low ga...
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♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ High breakdown voltage High input impedance Low gate threshold voltage Low drain-source ON resistance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown Specially suited for telephone subsets max. ∅ .022 (0.55) .098 (2.5) D G S MECHANICAL DATA Case: TO-92 Plastic Package Weight: approx. 0.18 g On special request, this transistor is also manufactured in the pin configuration TO-18.
BS108 Datasheet
