BS108
FEATURES
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High breakdown voltage High input impedance Low gate threshold voltage Low drain-source ON resistance High-speed switching No minority carrier storage time CMOS logic patible input No thermal runaway No secondary breakdown Specially suited for telephone subsets max. ∅ .022 (0.55) .098 (2.5) D G S
MECHANICAL DATA
Case: TO-92 Plastic Package Weight: approx. 0.18 g
On special request, this transistor is also manufactured in the pin configuration TO-18.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage (pulsed) Drain Current (continuous) Power Dissipation at Tamb = 25 °C Junction Temperature Storage Temperature Range
1)
Value 240 240 ±20 230 0.831) 150
- 65 to +150
Unit V V V m A W °C °C
VDSS VDGS VGS ID Ptot Tj TS
Valid provided that leads are kept at ambient temperature at a distance of...
