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BS107. For precise diagrams, and layout, please refer to the original PDF.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BS107/D TMOS Switching N–Channel — Enhancement 2 GATE 1 DRAIN BS107 BS107A ® 3 SOURCE MAXIMUM RATINGS Rating ...
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ncement 2 GATE 1 DRAIN BS107 BS107A ® 3 SOURCE MAXIMUM RATINGS Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive (tp ≤ 50 µs) Drain Current Continuous(1) Pulsed(2) Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VDS VGS VGSM ID IDM PD TJ, Tstg Value 200 ± 20 ± 30 250 500 350 – 55 to 150 mW °C Unit Vdc Vdc Vpk mAdc 1 2 3 CASE 29–04, STYLE 30 TO–92 (TO–226AA) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Zero–Gate–Voltage Drain Current (VDS = 130 Vdc, VGS = 0)
BS107 Datasheet
