BS108
FEATURES
- Direct interface to C-MOS, TTL, etc.
- High-speed switching
- No secondary breakdown. DESCRIPTION
N-channel enhancement mode vertical D-MOS transistor in a TO-92 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. PINNING PIN 1 2 3 gate drain DESCRIPTION source QUICK REFERENCE DATA SYMBOL VDS ID RDS(on) VGS(th) PARAMETER drain-source voltage DC drain current drain-source on-resistance gate-source threshold voltage
MAX. 200 250 8 1.8
UNIT V m A Ω V handbook, 2 columns handbook, halfpage d
2 3 g
MSB033 MBB076
- 1 s
Fig.1 Simplified outline (TO-92) and symbol.
April 1995
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VDS ±VGSO ID IDM Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage DC drain current peak drain current...
