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BS107 - N-channel enhancement mode vertical D-MOS transistor

General Description

N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope.

Intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers.

Key Features

  • Direct interface to C-MOS, TTL, etc.
  • High-speed switching.
  • No secondary breakdown.

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Full PDF Text Transcription for BS107 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BS107. For precise diagrams, and layout, please refer to the original PDF.

DISCRETE SEMICONDUCTORS DATA SHEET BS107 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Ph...

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t specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope. Intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. PINNING - TO-92 variant PIN 1 2 3 gate drain DESCRIPTION source Fig.1 Simplified outline and symbol.