BS107
FEATURES
- Direct interface to C-MOS, TTL, etc.
- High-speed switching
- No secondary breakdown. DESCRIPTION
N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope. Intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. PINNING
- TO-92 variant PIN 1 2 3 gate drain DESCRIPTION source Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL VDS VGSth ID RDSon PARAMETER drain-source voltage (DC) gate-source threshold voltage drain current (DC) drain-source on-state resistance MAX. 200 2.4 150 28
UNIT V V m A Ω handbook, halfpage d
1 2 3 g
MAM146 s
April 1995
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VDS ±VGSO ID IDM Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage drain current drain current total power...
