Datasheet4U Logo Datasheet4U.com

G18P03S Datasheet P-Channel Trench Power MOSFET

Manufacturer: GOFORD

📥 Download Datasheet

Datasheet Details

Part number G18P03S
Manufacturer GOFORD
File Size 2.05 MB
Description P-Channel Trench Power MOSFET
Download G18P03S Download (PDF)

General Description

The G18P03S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -5V.

This device is suitable for use as a wide variety of applications.

Overview

GOFORD P-Channel Trench Power MOSFET General.

Key Features

  • VDSS RDS(ON) RDS(ON) ID @-4.5V(Typ) @ -10V(Typ) -30V 10.5 mΩ 8.1mΩ -15A.
  • High Power and current handing capability.
  • RoHS Compliant.
  • Surface Mount Package.

More Datasheets from GOFORD

Part Number Description
G18P03 P-Channel Trench Power MOSFET
G18P03D3 P-Channel Trench MOSFET
G18N50 N-Channel Enhancement Mode Power MOSFET
G18N50T N-Channel Enhancement Mode Power MOSFET
G18NP06Y N and P Channel Enhancement Mode Power MOSFET