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G18P03 Datasheet P-Channel Trench Power MOSFET

Manufacturer: GOFORD

Download the G18P03 datasheet PDF. This datasheet also includes the G18P03S variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (G18P03S-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number G18P03
Manufacturer GOFORD
File Size 2.05 MB
Description P-Channel Trench Power MOSFET
Datasheet download datasheet G18P03 Datasheet

General Description

The G18P03S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -5V.

This device is suitable for use as a wide variety of applications.

Overview

GOFORD P-Channel Trench Power MOSFET General.

Key Features

  • VDSS RDS(ON) RDS(ON) ID @-4.5V(Typ) @ -10V(Typ) -30V 10.5 mΩ 8.1mΩ -15A.
  • High Power and current handing capability.
  • RoHS Compliant.
  • Surface Mount Package.

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