• Part: G18P03
  • Description: P-Channel Trench Power MOSFET
  • Category: MOSFET
  • Manufacturer: GOFORD
  • Size: 2.05 MB
Download G18P03 Datasheet PDF
GOFORD
G18P03
Description The G18P03S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -5V. This device is suitable for use as a wide variety of applications. Features - VDSS RDS(ON) RDS(ON) @-4.5V(Typ) @ -10V(Typ) -30V 10.5 mΩ 8.1mΩ -15A - High Power and current handing capability - Ro HS pliant - Surface Mount Package Application - DC-DC converter - Load switch - Power management Ordering Information Part Number G18P03S Marking G18P03 G18P03S Schematic Diagram Marking and pin assignment Case SOP-8 SOP-8 Packaging 4000pcs/Reel Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter Drain-Source Voltage (VGS=0V) Gate-Source Voltage (VDS=0V) Drain Current-Continuous(Tc=25℃) IDM (pluse) Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation(Tc=25℃) TJ,TSTG Operating Junction and Storage Temperature Range Table 2. Thermal...