• Part: G18P03D3
  • Description: P-Channel Trench MOSFET
  • Category: MOSFET
  • Manufacturer: GOFORD
  • Size: 2.05 MB
Download G18P03D3 Datasheet PDF
GOFORD
G18P03D3
Description The G18P03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features - VDS - ID (at VGS = -10V) - RDS(ON) (at VGS = -10V) - RDS(ON) (at VGS = -4.5V) - 100% Avalanche Tested - Ro HS pliant Application -30V -28A < 10mΩ < 15mΩ - Power switch - DC/DC converters Schematic diagram Marking and pin assignment Device G18P03D3 Package DFN3X3-8L Marking G18P03 DFN3X3-8L Packaging 5000pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Power Dissipation Operating Junction and Storage Temperature Range (note1) VDS ID IDM VGS PD TJ, Tstg Thermal Resistance Parameter Thermal Resistance, Junction-to-Case Symbol Rth JC Value -30 -28 -80 ±20 40 -55 To 150 Value 3.13 Unit V A A V W ºC Unit ºC/W .gofordsemi. TEL:0755-29961263 FAX:0755-29961466 (A1331)...