G18N50T
Description
This advanced MOSFET family has optimized on-state resistance, and also provides superior switching performance and higher avalanche energy strength. This device family is suitable for high efficiency switch mode power supplies.
General Features l VDS
500V l ID (at VGS = 10V)
18A l RDS(ON) (at VGS = 10V)
< 0.35Ω l 100% Avalanche Tested l Ro HS pliant l Low Crss (typical 4.3p F) l Fast switching capability l Improved dv/dt capability
Schematic diagram
Application l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply (UPS) l Power Factor Correction (PFC) (PFC) l Charger
Ordering Information
Device
Package
TO-220
Marking G18N50
TO-220
Packaging 50pcs/Tube
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Parameter
Symbol
Value
Unit
Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Power Dissipation Single pulse avalanche energy Operating Junction and Storage Temperature Range
(note1)...
