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G18NP06Y Datasheet N and P Channel Enhancement Mode Power MOSFET

Manufacturer: GOFORD

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Datasheet Details

Part number G18NP06Y
Manufacturer GOFORD
File Size 899.93 KB
Description N and P Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G18NP06Y Datasheet

General Description

This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

General

Overview

G18NP06Y N and P Channel Enhancement Mode Power MOSFET.

Key Features

  • NMOS.
  • VDS.
  • ID (at VGS = 10V).
  • RDS(ON) (at VGS = 10V).
  • RDS(ON) (at VGS = 4.5V) 60V 18A < 35mΩ < 45mΩ Schematic diagram D1/D2.
  • PMOS.
  • VDS.
  • ID (at VGS = -10V).
  • RDS(ON) (at VGS = -10V).
  • RoHS Compliant -60V -18A < 45mΩ S1 G1 S2 G2 Marking and pin assignment.

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