G18NP06Y
Description
This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
General Features
- NMOS
- VDS
- ID (at VGS = 10V)
- RDS(ON) (at VGS = 10V)
- RDS(ON) (at VGS = 4.5V)
60V 18A < 35mΩ
< 45mΩ
Schematic diagram
D1/D2
- PMOS
- VDS
- ID (at VGS = -10V)
- RDS(ON) (at VGS = -10V)
- Ro HS pliant
-60V -18A < 45mΩ
S1 G1 S2 G2
Marking and pin assignment
Application
- Power switch
- DC/DC converters
Device G18NP06Y
Package TO-252-4
Marking G18NP06
TO-252-4 Packaging 2500pcs/Reel
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Parameter
Symbol
NMOS
PMOS
Unit
Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Power Dissipation Single pulse avalanche energy Operating Junction and Storage Temperature Range
Thermal Resistance
Parameter Thermal Resistance, Junction-to-Case
(note1)...
