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BL2305 - P-Channel Power Mosfet

Features

  • Super High Dense Cell Design for Extremely Pb Low RDS(ON) Lead-free.
  • Reliable and Rugged.
  • Electrostatic Sensitive Devices.
  • MSL1.

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Full PDF Text Transcription

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Production specification P-Channel Enhancement Mode Power Mosfet FEATURES  Super High Dense Cell Design for Extremely Pb Low RDS(ON) Lead-free  Reliable and Rugged  Electrostatic Sensitive Devices.  MSL1 APPLICATIONS  Power Management in Notebook.  Portable Equipment.  Battery Powered System. BL2305 SOT-23 ORDERING INFORMATION Type No. Marking BL2305 2305 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage -12 VGSS ID IDM Gate -Source voltage Maximum Drain current TA=25℃ TA=70℃ Pulsed Drain current ±8 -4.2 -3.4 -10 PD Power Dissipation 1.37 RθJA TJ, Tstg Thermal resistance,Junction-to-Ambient Operating Junction and Storage Temperature Range 90 -55~+150 Units V V A A W ℃/W ℃ C277 Rev.
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