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BL2303 - P-Channel Power Mosfet

Features

  • Electrostatic Sensitive Devices.
  • VDS (V) = -30V.
  • ID = -2.7A(VGS =-10V).
  • RDS(ON) < 190mΩ (VGS = -10V) RDS(ON) < 330mΩ (VGS = -4.5V) Pb Lead-free.

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Full PDF Text Transcription

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Production specification P-Channel Enhancement Mode Field Effect Transistor BL2303 FEATURES  Electrostatic Sensitive Devices.  VDS (V) = -30V  ID = -2.7A(VGS =-10V)  RDS(ON) < 190mΩ (VGS = -10V) RDS(ON) < 330mΩ (VGS = -4.5V) Pb Lead-free APPLICATIONS  P-channel enhancement mode effect transistor.  Switching application. ORDERING INFORMATION Type No. Marking BL2303 2303 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS ID IDM PD RθJA Gate -Source voltage Continuous Drain Current @TC=25℃ @TC=70℃ Pulsed Drain Current Power Dissipation @TC=25℃ @TC=70℃ @TA=25℃ @TA=70℃ Thermal resistance,Junction-to-Ambient TJ, Tstg Junction and Storage Temperature Value -30 ±20 -2.7 -2.2 -10 2.3 1.5 1.0 0.
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