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BL2301W - P-Channel Enhancement MOSFET

Features

  • RDS(ON)≤150mΩ@ VGS=-4.5V.
  • RDS(ON)≤200mΩ@ VGS=-2.5V.
  • High-speed switching.
  • Drive circuits can be simple.
  • Parallel use is easy. P-Channel Enhancement MOSFET BL2301W Typical.

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Datasheet preview – BL2301W

Datasheet Details

Part number BL2301W
Manufacturer Galaxy Microelectronics
File Size 392.58 KB
Description P-Channel Enhancement MOSFET
Datasheet download datasheet BL2301W Datasheet
Additional preview pages of the BL2301W datasheet.

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Full PDF Text Transcription

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Features  RDS(ON)≤150mΩ@ VGS=-4.5V.  RDS(ON)≤200mΩ@ VGS=-2.5V.  High-speed switching.  Drive circuits can be simple.  Parallel use is easy. P-Channel Enhancement MOSFET BL2301W Typical Applications  Power management in note book.  Switching application.  Battery powered system  Load switch Mechanical Data  Case: SOT-323.  Molding Compound, UL Flammability Classification Rating 94V-0.  Terminals: Matte Tin Plated Leads, Solderable Per MIL-STD-202, Method 208. SOT-323 Ordering Information Part Number BL2301W Package SOT-323 Shipping 3000 pcs / Tape & Reel Marking Code 2301 Maximum Ratings (@TA=25℃ unless otherwise specified) Parameter Symbol Value Drain-Source Voltage VDSS -20 Gate -Source Voltage Continuous Drain Current VGSS ±12 TA =25℃ ID -1.
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