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BL2301 - P-Channel Enhancement Mode Field Effect Transistor

Features

  • z RDS(ON)≤110mΩ@VGS=-4.5V. Pb z RDS(ON)≤150mΩ@VGS=-2.5V. Lead-free z Super high density cell design for extremely low RDS(ON).

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Datasheet Details

Part number BL2301
Manufacturer Galaxy Microelectronics
File Size 380.83 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet BL2301 Datasheet
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s Production specification P-Channel Enhancement Mode Field Effect Transistor BL2301 FEATURES z RDS(ON)≤110mΩ@VGS=-4.5V. Pb z RDS(ON)≤150mΩ@VGS=-2.5V. Lead-free z Super high density cell design for extremely low RDS(ON). APPLICATIONS z Power Management in Note book. z Portable Equipment. z Battery Powered System. z Load Switch. z DSC. ORDERING INFORMATION SOT-23 Type No. BL2301 Marking A1T Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage -20 VGSS ID IDM PD RθJA Gate -Source voltage Maximum Drain current TA=25℃ TA=70℃ Pulsed Drain current Power Dissipation TA=25℃ TA=70℃ Thermal resistance,Junction-to-Ambient ±8 -2.0 -1.6 -10 0.7 0.
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