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BL2300 - N-Channel Power Mosfet

Features

  • VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0A Pb.
  • VDS=20V,RDS(ON)=60m @VGS=2.5V,ID=4.0A Lead-free.
  • VDS=20V,,RDS(ON)=75m @VGS=1.8V,ID=1.0A.
  • Electrostatic Sensitive Devices. BL2300.

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Full PDF Text Transcription

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Production specification N-Channel Enhancement Mode Field Effect Transistor FEATURES  VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0A Pb  VDS=20V,RDS(ON)=60m @VGS=2.5V,ID=4.0A Lead-free  VDS=20V,,RDS(ON)=75m @VGS=1.8V,ID=1.0A  Electrostatic Sensitive Devices. BL2300 APPLICATIONS  Power Management in Note book.  Portable Equipment.  Battery Powered System.  Load Switch.  DSC. ORDERING INFORMATION Type No. Marking BL2300 2300 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS VGSS Drain-Source voltage Gate -Source voltage 20 ±10 ID Maximum Drain current TA=25℃ 3.8 IDM PD RθJA TJ,Tstg Pulsed Drain current Power Dissipation Thermal resistance,Junction-to-Ambient Operating Junction and StorageTemperature 15 1.
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