IRLW640A - Power MOSFET

Features

• Avalanche Rugged Technology.
• Rugged Gate Oxide Technology.
• Lower Input Capacitance.
• Improved Gate Charge.
• Extended Safe Operating Area.
• 150°C Operating Temperature.
• Lower Leakage Current: 10µA (Max. ) @ VDS = 200V.
• Lower RDS(ON): 0.145Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Curre.