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IRLW530A - HEXFET Power MOSFET

Download the IRLW530A datasheet PDF. This datasheet also covers the IRLI530A variant, as both devices belong to the same hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Avalanche Rugged Technology.
  • Rugged Gate Oxide Technology.
  • Lower Input Capacitance.
  • Improved Gate Charge.
  • Extended Safe Operating Area.
  • 175° C Operating Temperature.
  • Lower Leakage Current: 10µA (Max. ) @ VDS = 100V.
  • Lower RDS(ON): 0. 101Ω (Typ. ) IRLW/I530A BVDSS = 100 V RDS(on) = 0.12Ω ID = 14 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR www. DataSheet.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRLI530A_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Fairchild (onsemi)

Part Number Description
IRLW510A ADVANCED POWER MOSFET
IRLW540A Power MOSFET
IRLW610A Advanced Power MOSFET
IRLW620A Power MOSFET
IRLW630A ADVANCED POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175° C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0. 101Ω (Typ.) IRLW/I530A BVDSS = 100 V RDS(on) = 0.12Ω ID = 14 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR www.DataSheet4U.
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