Download the IRLW610A datasheet PDF.
This datasheet also covers the IRLI610A variant, as both devices belong to the same advanced power mosfet family and are provided as variant models within a single manufacturer datasheet.
Features
- Avalanche Rugged Technology.
- Rugged Gate Oxide Technology.
- Lower Input Capacitance.
- Improved Gate Charge.
- Extended Safe Operating Area.
- 150° C Operating Temperature.
- Lower Leakage Current: 10µA (Max. ) @ VDS = 200V.
- Lower RDS(ON): 1.185Ω (Typ. )
IRLW/I610A
BVDSS = 200 V RDS(on) = 1.5Ω ID = 3.3 A
D2-PAK
2
I2-PAK
1 1 3 2 3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Chara.
IRLW610A Datasheet
