Features
Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
175° C Operating Temperature.
Lower Leakage Current: 10µA (Max. ) @ VDS = 100V.
Lower RDS(ON): 0.336Ω (Typ. )
IRLW/I510A
BVDSS = 100 V RDS(on) = 0.44Ω ID = 5.6 A
D2-PAK
2
I2-PAK
1 1 3 2 3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Char.
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$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175° C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.336Ω (Typ.)
IRLW/I510A
BVDSS = 100 V RDS(on) = 0.44Ω ID = 5.6 A
D2-PAK
2
I2-PAK
1 1 3 2 3
1. Gate 2. Drain 3.
Published:
Apr 16, 2005
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IRLW510A Datasheet
