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IRLW630A - Advanced Power MOSFET

Download the IRLW630A datasheet PDF. This datasheet also covers the IRLI630A variant, as both devices belong to the same advanced power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Avalanche Rugged Technology.
  • Rugged Gate Oxide Technology.
  • Lower Input Capacitance.
  • Improved Gate Charge.
  • Extended Safe Operating Area.
  • 150° C Operating Temperature.
  • Lower Leakage Current: 10µA (Max. ) @ VDS = 200V.
  • Lower RDS(ON): 0.335Ω (Typ. ) IRLW/I630A BVDSS = 200 V RDS(on) = 0.4Ω ID = 9 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR www. DataSheet4U. com.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRLI630A_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150° C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.335Ω (Typ.) IRLW/I630A BVDSS = 200 V RDS(on) = 0.4Ω ID = 9 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR www.DataSheet4U.
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