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IRFWZ24 - Power MOSFET

Product Overview

Fairchild Semiconductor

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IRFWZ24 Power MOSFET by Fairchild Semiconductor - Datasheet Preview — Datasheet preview – IRFWZ24

Datasheet Details

Part number	IRFWZ24
Manufacturer	Fairchild Semiconductor
File Size	219.94 KB
Description	Power MOSFET
Datasheet	IRFWZ24 Datasheet
Additional preview pages of the IRFWZ24 datasheet.

Product details

Features

Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
175°C Operating Temperature.
Lower Leakage Current: 10µA (Max. ) @ VDS = 60V.
Lower RDS(ON): 0.050Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Curren.

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Published: Aug 3, 2016 |