IRFW550A - (IRFI550A / IRFW550A) Advanced Power MOSFET
Fairchild (now onsemi)
Download the IRFW550A datasheet PDF.
This datasheet also covers the IRFI550A variant, as both devices belong to the same (irfi550a / irfw550a) advanced power mosfet family and are provided as variant models within a single manufacturer datasheet.
Key Features
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max. ) @ VDS = 100V Lower RDS(ON) : 0.032 Ω (Typ. )
Ο
IRFW/I550A
BVDSS = 100 V RDS(on) = 0.04 Ω ID = 40 A
D2-PAK
2
I2-PAK
1 1 3 2 3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Conti.
Note: The manufacturer provides a single datasheet file (IRFI550A_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for IRFW550A (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IRFW550A. For precise diagrams, and layout, please refer to the original PDF.
hnology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.032 Ω (Typ.) Ο IRFW/I550A BVDSS = 100 V RDS(on) = 0.04 Ω ID = 40 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total
IRFW550A Datasheet
