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IRFW614A - Power MOSFET

Download the IRFW614A datasheet PDF. This datasheet also covers the IRFI614A variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Avalanche Rugged Technology.
  • Rugged Gate Oxide Technology.
  • Lower Input Capacitance.
  • Improved Gate Charge.
  • Extended Safe Operating Area.
  • Lower Leakage Current: 10µA (Max. ) @ VDS = 250V.
  • Lower RDS(ON): 1.393Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed (.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFI614A-FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IRFW614A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRFW614A. For precise diagrams, and layout, please refer to the original PDF.

$GYDQFHG 3RZHU 026)(7 IRFW/I614A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Op...

View more extracted text
gy ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V ♦ Lower RDS(ON): 1.393Ω (Typ.

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