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IRFW640A - Power MOSFET

Download the IRFW640A datasheet PDF. This datasheet also covers the IRFI640A variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max. ) @ VDS = 200V Lower RDS(ON) : 0.144 Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25oC) Continuous Drain Current (TC=100oC) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanch.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFI640A-FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFW610A Power MOSFET Samsung
IRFW630A Power MOSFET Samsung
IRFW630B N-Channel MOSFET ON Semiconductor
IRFW450 N-Channel MOSFET Transistor Inchange Semiconductor
IRFW720A Power MOSFET Samsung

Other Datasheets by Fairchild (onsemi)

Part Number Description
IRFW640B N-Channel MOSFET
IRFW644A Power MOSFET
IRFW644B N-Channel MOSFET
IRFW610B N-Channel MOSFET
IRFW614A Power MOSFET

Full PDF Text Transcription

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Advanced Power MOSFET IRFW/I640A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25oC) Continuous Drain Current (TC=100oC) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25oC) * Total Power Dissipation (TC=25oC) Linear Derating Factor O2 O1 O1 O3 Operating Junction and Storage Temperature Range Maximum Lead Temp.
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