Datasheet Details
| Part number | IRFW610B |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 683.58 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 IRFW610B Datasheet
|
|
|
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
Key Features
- 3.3A, 200V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 7.2 nC) Low Crss ( typical 6.8 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !.
- ◀ ▲.
- G S D2-PAK IRFW Series G D S I2-PAK IRFI Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Cont.
