Download the IRFW620A datasheet PDF.
This datasheet also covers the IRFI620A variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.
Key Features
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max. ) @ VDS = 200V Low RDS(ON) : 0.626 Ω (Typ. )
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25oC ) Continuous Drain Current (TC=100oC )
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy Avalanche.
Note: The manufacturer provides a single datasheet file (IRFI620A-FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for IRFW620A (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IRFW620A. For precise diagrams, and layout, please refer to the original PDF.
ower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.626 Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25oC ) Continuous Drain Current (TC=100oC ) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25oC )* Total Power Dissipation (TC=25oC ) Linear Derating Factor O2 O1 O1 O3 Operating Junction and Stora
IRFW620A Datasheet
