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IRFWZ14A - Power MOSFET

Download the IRFWZ14A datasheet PDF. This datasheet also covers the IRFIZ14A variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Avalanche Rugged Technology.
  • Rugged Gate Oxide Technology.
  • Lower Input Capacitance.
  • Improved Gate Charge.
  • Extended Safe Operating Area.
  • 175°C Operating Temperature.
  • Lower Leakage Current: 10µA (Max. ) @ VDS = 60V.
  • Lower RDS(ON): 0.097Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Curren.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFIZ14A-FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IRFWZ14A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRFWZ14A. For precise diagrams, and layout, please refer to the original PDF.

$GYDQFHG 3RZHU 026)(7 IRFW/IZ14A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Op...

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gy ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V ♦ Lower RDS(ON): 0.097Ω (Typ.