Datasheet Details
| Part number | IRFWZ24A |
|---|---|
| Manufacturer | Samsung Semiconductor |
| File Size | 208.25 KB |
| Description | Power MOSFET |
| Datasheet |
 IRFWZ24A Datasheet
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Key Features
- Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175¡ ÉOperating Temperature Lower Leakage Current : 10 µA (Max. ) @ VDS = 60V Lower RDS(ON) : 0.050 Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25oC ) Continuous Drain Current (TC=100oC ) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Puls.
