Datasheet Details
| Part number | FQA28N50F |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 647.34 KB |
| Description | 500V N-Channel MOSFET |
| Datasheet |
 FQA28N50F Datasheet
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General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Key Features
- 28.4A, 500V, RDS(on) = 0.16Ω @VGS = 10 V Low gate charge ( typical 110 nC) Low Crss ( typical 60 pF) Fast switching 100% avalanche tested Improved dv/dt capability Fast recovery body diode ( max, 250ns ) D ! " G! G DS ! " " " TO-3P FQA Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Dra.
