FQA24N60 - 600V N-Channel MOSFET

Product Overview

Fairchild Semiconductor

Part number	FQA24N60
Manufacturer	Fairchild Semiconductor
File Size	1.51 MB
Description	600V N-Channel MOSFET
Datasheet	FQA24N60 Datasheet
Additional preview pages of the FQA24N60 datasheet.

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

23.5 A, 600 V, RDS(on) = 240 mΩ (Max. ) @ VGS = 10 V, ID = 11.8 A.
Low Gate Charge (Typ. 110 nC).
Low Crss (Typ. 56 pF).
100% Avalanche Tested D G G D S TO-3PN Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current.

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Published: Apr 1, 2005 |