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FQA24N50 - 500V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • 24 A, 500 V, RDS(on) = 200 mΩ (Max. ) @ VGS = 10 V, ID = 12 A.
  • Low Gate Charge (Typ. 90 nC).
  • Low Crss (Typ. 55 pF).
  • 100% Avalanche Tested.
  • RoHS compliant.

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Full PDF Text Transcription for FQA24N50 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FQA24N50. For precise diagrams, tables, and layout, please refer to the original PDF.

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FQA24N50 — N-Channel QFET® MOSFET June 2014 FQA24N50 N-Channel QFET® MOSFET 500 V, 24 A, 200 mΩ Features • 24 A, 500 V, RDS(on) = 200 mΩ (Max.) @ VGS = 10 V, ID = 12 A • Low Gate Charge (Typ. 90 nC) • Low Crss (Typ. 55 pF) • 100% Avalanche Tested • RoHS compliant Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.