33 A, 150 V, RDS(on) = 90 mΩ (Max. ) @ VGS = 10 V,
produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET
ID = 16.5 A
technology has been especially tailored to reduce on-state.
Low Gate Charge (Typ. 0 nC)
resistance, and to provide superior switching performance and.
Low Crss (Typ. 110 pF) high avalanche energy strength. These devices are suitable
for switched m.
Full PDF Text Transcription for FQA28N15 (Reference)
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FQA28N15 — N-Channel QFET® MOSFET FQA28N15 N-Channel QFET® MOSFET 150 V, 33 A, 90 mΩ June 2014 Description Features This N-Channel enhancement mode power MOSFET is • 33 A...
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iption Features This N-Channel enhancement mode power MOSFET is • 33 A, 150 V, RDS(on) = 90 mΩ (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET ID = 16.5 A technology has been especially tailored to reduce on-state • Low Gate Charge (Typ. 0 nC) resistance, and to provide superior switching performance and • Low Crss (Typ. 110 pF) high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor • 100% Avalanche Tested control, and variable switching power applications.
FQA28N15 Datasheet
