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FQA22P10 - 100V P-Channel MOSFET

General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • -24A, -100V, RDS(on) = 0.125Ω @VGS = -10 V Low gate charge ( typical 40 nC) Low Crss ( typical 160 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G TO-3P G DS FQA Series TC = 25°C unless otherwise noted S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - C.

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More Datasheets from Fairchild (now onsemi)

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Full PDF Text Transcription for FQA22P10 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FQA22P10. For precise diagrams, tables, and layout, please refer to the original PDF.

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FQA22P10 QFET FQA22P10 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. TM Features • • • • • • • -24A, -100V, RDS(on) = 0.