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FDMD86100 - MOSFET

General Description

Common source configuration to eliminate PCB routing Large source pad on bottom of package for enhanced thermals Shielded Gate MOSFET Technology Max rDS(on) = 10.5 mΩ at VGS = 10 V, ID = 10 A Max rDS(on) = 17.3 mΩ at VGS = 6 V, ID = 7.8 A

Key Features

  • General.

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FDMD86100 Dual N-Channel Shielded Gate PowerTrench® MOSFET February 2015 FDMD86100 Dual N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 39 A, 10.5 mΩ Features General Description „ Common source configuration to eliminate PCB routing „ Large source pad on bottom of package for enhanced thermals „ Shielded Gate MOSFET Technology „ Max rDS(on) = 10.5 mΩ at VGS = 10 V, ID = 10 A „ Max rDS(on) = 17.3 mΩ at VGS = 6 V, ID = 7.8 A „ Ideal for flexible layout in secondary side synchronous rectification „ Termination is Lead-free and RoHS Compliant „ 100% UIL tested This package integrates two N-Channel devices connected internally in common-source configuration and incorporates Shielded Gate technology.