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FDMD8540L - Dual N-Channel MOSFET

General Description

This device includes two 40 V N

Power (5 mm x 6 mm) package.

HS source and LS drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon.

Key Features

  • Q1: N.
  • Channel.
  • Max rDS(on) = 1.5 mW at VGS = 10 V, ID = 33 A.
  • Max rDS(on) = 2.2 mW at VGS = 4.5 V, ID = 26 A Q2: N.
  • Channel.
  • Max rDS(on) = 1.5 mW at VGS = 10 V, ID = 33 A.
  • Max rDS(on) = 2.2 mW at VGS = 4.5 V, ID = 26 A.
  • Ideal for Flexible Layout in Primary Side of Bridge Topology.
  • 100% UIL Tested.
  • Kelvin High Side MOSFET Drive Pin.
  • out Capability.
  • This Device is Pb.
  • Free and are RoHS Compliant Ap.

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Datasheet Details

Part number FDMD8540L
Manufacturer onsemi
File Size 670.77 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet FDMD8540L Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – Dual, N-Channel, POWERTRENCH) Q1: 40 V, 156 A, 1.5 mW Q2: 40 V, 156 A, 1.5 mW FDMD8540L General Description This device includes two 40 V N−Channel MOSFETs in a dual Power (5 mm x 6 mm) package. HS source and LS drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon. Features Q1: N−Channel • Max rDS(on) = 1.5 mW at VGS = 10 V, ID = 33 A • Max rDS(on) = 2.2 mW at VGS = 4.5 V, ID = 26 A Q2: N−Channel • Max rDS(on) = 1.5 mW at VGS = 10 V, ID = 33 A • Max rDS(on) = 2.2 mW at VGS = 4.