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FDMD85100 - MOSFET

General Description

Q1: N-Channel Max rDS(on) = 9.9 mΩ at VGS = 10 V, ID = 10.4 A Max rDS(on) = 16.4 mΩ at VGS = 6 V, ID = 8 A Q2: N-Channel Max rDS(on) = 9.9 mΩ at VGS = 10 V, ID = 10.4 A Max rDS(on) = 16.4 mΩ at VGS = 6 V, ID = 8 A Ideal for flexible layout in primar

Key Features

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FDMD85100 Dual N-Channel PowerTrench® MOSFET September 2015 FDMD85100 Dual N-Channel PowerTrench® MOSFET Q1: 100 V, 48A, 9.9 mΩ Q2: 100 V, 48A, 9.9 mΩ Features General Description Q1: N-Channel „ Max rDS(on) = 9.9 mΩ at VGS = 10 V, ID = 10.4 A „ Max rDS(on) = 16.4 mΩ at VGS = 6 V, ID = 8 A Q2: N-Channel „ Max rDS(on) = 9.9 mΩ at VGS = 10 V, ID = 10.4 A „ Max rDS(on) = 16.4 mΩ at VGS = 6 V, ID = 8 A „ Ideal for flexible layout in primary side of bridge topology „ Termination is Lead-free and RoHS Compliant „ 100% UIL tested „ Kelvin High Side MOSFET drive pin-out capability This device includes two 100V N-Channel MOSFETs in a dual Power (5 mm X 6 mm) package. HS source and LS Drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon.