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FDMD86100 - Dual N-Channel MOSFET

General Description

This package integrates two N Channel devices connected internally in common

source configuration and incorporates Shielded Gate technology.

This enables very low package parasitics and optimized thermal path to the common source pad on the bottom.

Key Features

  • Common Source Configuration to Eliminate PCB Routing.
  • Large Source Pad on Bottom of Package for Enhanced Thermals.
  • Shielded Gate MOSFET Technology.
  • Max rDS(on) = 10.5 mW at VGS = 10 V, ID = 10 A.
  • Max rDS(on) = 17.3 mW at VGS = 6 V, ID = 7.8 A.
  • Ideal for Flexible Layout in Secondary Side Synchronous Rectification.
  • 100% UIL tested.
  • This Device is Pb.
  • Free, Halide Free and is RoHS Compliant.

📥 Download Datasheet

Datasheet Details

Part number FDMD86100
Manufacturer onsemi
File Size 424.46 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet FDMD86100 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET www.onsemi.com MOSFET – Dual, N-Channel, Shielded Gate, POWERTRENCH) 100 V, 39 A, 10.5 mW VDS 100 V rDS(on) MAX 10.5 mW @ 10 V 17.3 mW @ 6 V ID MAX 39A FDMD86100 General Description This package integrates two N−Channel devices connected internally in common−source configuration and incorporates Shielded Gate technology. This enables very low package parasitics and optimized thermal path to the common source pad on the bottom. Provides a very small footprint (5 x 6 mm) for higher power density. Features • Common Source Configuration to Eliminate PCB Routing • Large Source Pad on Bottom of Package for Enhanced Thermals • Shielded Gate MOSFET Technology • Max rDS(on) = 10.5 mW at VGS = 10 V, ID = 10 A • Max rDS(on) = 17.3 mW at VGS = 6 V, ID = 7.