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FDMD82100 - Dual N-Channel MOSFET

General Description

This device includes two 100 V N

Power (3.3 mm X 5 mm) package.

HS source and LS Drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon.

Key Features

  • Max rDS(on) = 19 mW at VGS = 10 V, ID = 7 A.
  • Max rDS(on) = 33 mW at VGS = 6 V, ID = 5.5 A.
  • Ideal for Flexible Layout in Primary Side of Bridge Topology.
  • 100% UIL Tested.
  • Kelvin High Side MOSFET Drive Pin.
  • out Capability.
  • This Device is Pb.
  • Free, Halide Free and RoHS Compliant.

📥 Download Datasheet

Datasheet Details

Part number FDMD82100
Manufacturer onsemi
File Size 384.60 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet FDMD82100 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – Dual N-Channel, POWERTRENCH) 100 V, 25 A, 19 mW FDMD82100 General Description This device includes two 100 V N−Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon. Features • Max rDS(on) = 19 mW at VGS = 10 V, ID = 7 A • Max rDS(on) = 33 mW at VGS = 6 V, ID = 5.