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DMN2016LHAB - Dual N-Channel MOSFET

General Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Case: U-DFN2030-6 Case Material: Molded Pl

Key Features

  • Low On-Resistance.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • ESD Protected Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).

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Other Datasheets by Diodes Incorporated

Part Number Description
DMN2016LFG Dual N-Channel MOSFET
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DMN2010UDZ DUAL N-CHANNEL MOSFET
DMN2011UFDE N-Channel MOSFET
DMN2011UFDF 20V N-CHANNEL MOSFET
DMN2011UFX Dual N-Channel MOSFET
DMN2011UTS N-CHANNEL MOSFET
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DMN2013UFX Dual N-Channel MOSFET
DMN2014LHAB Dual N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NAEDWVPARNOCDEUICNTF O R M A T I O N DMN2016LHAB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(on)max 15.5mΩ @ VGS = 4.5V 16.5mΩ @ VGS = 4.0V 19mΩ @ VGS = 3.1V 20mΩ @ VGS = 2.5V 30mΩ @ VGS = 1.8V ID TA = +25°C 7.5A 7.3A 6.9A 6.7A 5.4A Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) Description Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.