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DMN2011UFDF - 20V N-CHANNEL MOSFET

General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Key Features

  • 0.6mm Profile.
  • Ideal for Low Profile.

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ADVANCE INFORMATION Product Summary BVDSS 20V RDS(ON) MAX 9.5mΩ @ VGS = 4.5V 11mΩ @ VGS = 2.5V ID MAX TA = +25°C 11.7A 10.8A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. DMN2011UFDF 20V N-CHANNEL ENHANCEMENT MODE MOSFET Features  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low Gate Threshold Voltage  Low On-Resistance  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e.