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DMN2011UFX - Dual N-Channel MOSFET

General Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

General Purpose Interfacing Switch Power Management Functions Mechanical Data

Key Features

  • Low On-Resistance.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • ESD Protected.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ADVANCED INFORMATION Product Summary V(BR)DSS 20V RDS(ON) max 9.5mΩ @ VGS = 4.5V 13mΩ @ VGS = 2.5V ID max TA = +25°C 12.2 A 10.4 A DMN2011UFX DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.