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DMN2010UDZ - DUAL N-CHANNEL MOSFET

General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Power Management Functions Battery Pack Load Switch Low On-R

Key Features

  • V(BR)DSS 24V RDS(ON) Max 7mΩ @ VGS = 4.5V 7.8mΩ @ VGS = 4.0V 8.2mΩ @ VGS = 3.7V 9.5mΩ @ VGS = 3.1V 10.5mΩ @ VGS = 2.5V ID TA = +25°C 11.0A 10.8A 10.6A 10.5A 10.0A.

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A D VNAENACWDEPVDRAIONNDCFUEOCIRTNMFAOT IROMNA T I O N DMN2010UDZ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V(BR)DSS 24V RDS(ON) Max 7mΩ @ VGS = 4.5V 7.8mΩ @ VGS = 4.0V 8.2mΩ @ VGS = 3.7V 9.5mΩ @ VGS = 3.1V 10.5mΩ @ VGS = 2.5V ID TA = +25°C 11.0A 10.8A 10.6A 10.5A 10.0A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications  Power Management Functions  Battery Pack  Load Switch  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  ESD Protected Gate > 2KV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.