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DMN2014LHAB - Dual N-Channel MOSFET

General Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Power Management Functions Battery Pack Load Switc

Key Features

  • Low On-Resistance.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • ESD Protected Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.
  • Case: U-DFN2030-6.
  • Case Material: Molded Plastic, “Green” Molding Compound UL Flammability Classification Rating 94V-0.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ADVANCE INFORMATION DMN2014LHAB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(on) max 13mΩ @ VGS = 4.5V 14mΩ @ VGS = 4.0V 17mΩ @ VGS = 3.1V 18mΩ @ VGS = 2.5V 28mΩ @ VGS = 1.8V ID TA = +25°C 9.0A 8.7A 8.0A 6.7A 6.3A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications • Power Management Functions • Battery Pack • Load Switch Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free.