Datasheet Details
| Part number | MXN6545 |
|---|---|
| Manufacturer | ChipSourceTek |
| File Size | 844.00 KB |
| Description | P-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 MXN6545 Datasheet
|
|
|
General Description
The MXN6545 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
Used in a wide variety of applications.
Key Features
- Schematic diagram.
- VDS =-30V，ID =-50A.
- RDS(ON) (Typ. )= 4.4m Ω @ VGS=-10V High density cell design for ultra low Rdson Fully characterized avalanche voltage and current k Good stability and uniformity with high EAS Excellent package for good heat dissipation e Special process technology for high ESD capability ceT.