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MXN30D12M - Dual N-Channel Power MOSFET

General Description

The MXN30D12M uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Key Features

  • Schematic diagram.
  • VDS =30V，ID =12A.
  • @VGS=4.5V RDS(ON)(Typ. )=14mΩ.
  • @VGS=2.5V RDS(ON)(Typ. )=18mΩ k.
  • High density cell design fo ultra low Rdson.
  • Fully characterized Avalanche voltage and current eTe.

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Datasheet Details

Part number MXN30D12M
Manufacturer ChipSourceTek
File Size 1.38 MB
Description Dual N-Channel Power MOSFET
Datasheet download datasheet MXN30D12M Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MXN30D12M Dual N-Channel Enhancement Mode Power MOSFET Description The MXN30D12M uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications General Features Schematic diagram  VDS =30V，ID =12A  @VGS=4.5V RDS(ON)(Typ.)=14mΩ  @VGS=2.5V RDS(ON)(Typ.)=18mΩ k  High density cell design fo ultra low Rdson  Fully characterized Avalanche voltage and current eTe Application Power switching application rc Hard Switched and High Frequency Circuits Uninterruptible Power Supply 3XXXX Marking and pin Assignment Sou PDFN3.3x3.